%0 Journal Article
%T Strain Effect on Photoluminescences from InGaN MQWs with Different Barriers Grown by MOCVD
%A YU Tong-Jun
%A KANG Xiang-Ning
%A PAN Yao-Bo
%A QIN Zhi-Xin
%A CHEN Zhi-Zhong
%A YANG Zhi-Jian
%A ZHANG Guo-Yi
%A <br>于彤军
%A 康香宁
%A 潘尧波
%A 秦志新
%A 陈志忠
%A 杨志坚
%A 张国义
%J 中国物理快报
%D 2007
%I 
%X InGaN/GaN MQWs, InGaN/AlGaN MQWs and InGaN/AlInGaN MQWs are grown on (0001) sapphire substrates by MOCVD. Membrane samples are fabricated by laser lift-off technology. The photoluminescence spectra of membranes show a blue shift of peak positions in InGaN/GaN MQWs, a red shift of peakpositions in InGaN/AlGaN MQWs and no shift of peak positions in InGaN/AlInGaN MQWs from those of samples with substrates. Differentchanges in Raman scattering spectra and HR-XRD (0002) profile of InGaN/AlInGaN MQWs, from those of InGaN/GaN MQWs and InGaN/AlGaN MQWs, are observed. The fact that the strain changes differently among InGaN MQWs with different barriers is confirmed. The AlInGaN barrier could adjust the residual stress for the least strain-induced electric field in InGaN/AlInGaN quantum wells.
%K 78
%K 55
%K Cr
%K 78
%K 67
%K De<br>疲劳效应
%K 光致发光
%K 屏障
%K 蓝宝石基底
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=03664AC44D4808188BBB79DB20A9746F&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=94C357A881DFC066&sid=995E04834DE9F169&eid=7264799D7F648D02&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0