%0 Journal Article
%T Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure<br>
%A GUO Lun-Chun
%A WANG Xiao-Liang
%A XIAO Hong-Ling
%A RAN Jun-Xue
%A Wang Cui-Mei
%A MA Zhi-Yong
%A LUO Wei-Jun
%A WANG Zhan-Guo
%A <br>
%J 中国物理快报
%D 2009
%I 
%X Electrical properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN structure are investigated by solving coupled Schr dinger and Poisson equation self-consistently. Our calculations show that the two-dimensional electron gas (2DEG) density will decrease with the thickness of the second barrier (AlyGa1-yN) once the AlN content of the second barrier is smaller than a critical value yc, and will increase with the thickness of the second barrier (AlyGa1-yN) when the critical AlN content of the second barrier yc is exceeded. Our calculations also show that the critical AlN content of the second barrier yc will increase with the AlN content and the thickness of the first barrier layer (AlxGa1-xN).
%K 73
%K 40
%K Kp
%K 02
%K 60
%K Cb
%K 85
%K 30
%K De<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=F18804007E4D2029865DF13F63909203&yid=DE12191FBD62783C&vid=96C778EE049EE47D&iid=CA4FD0336C81A37A&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0