%0 Journal Article
%T Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode
%A LIU Bo
%A FENG Gao-Ming
%A WU Liang-Cai
%A SONG Zhi-Tang
%A LIU Qi-Bin
%A FENG Song-Lin
%A CHEN Bomy
%A <br>刘波
%A 冯高明
%A 吴良才
%A 宋志棠
%A 刘奇斌
%A 封松林
%A CHEN
%A Bomy
%J 中国物理快报
%D 2007
%I 
%X In order to reduce the reset current of cllalcogenide random access memory; a W sub-microtube heater electrode with outer/inner diameter of 260/100nm, which was fabricated with standard 0.184-μm technology, is proposed for the first time to achieve a reset current of about 0.5 mA. The reasons may be that sub-microtube increases the number of electrode edge and thermal efficiency is improved greatly because the thermal density on the edge of sub-microtube electrode is generally the highest.
%K 85
%K 35
%K -p
%K 85
%K 30
%K De
%K 73
%K 90
%K +f<br>硫族化合物
%K 记忆细胞
%K 加热器
%K 电极
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=A6F1F92187EC7BB8AC330CA10015C767&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=CA4FD0336C81A37A&sid=30897FA31CA3354D&eid=7ABC4505E3960D2B&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=2&reference_num=0