%0 Journal Article
%T Dose-rate effects of p-channel metal oxide semiconductor field-effect transistors at various biasing conditions<br>不同偏置条件下PMOSFETs的剂量率效应研究
%A Lan Bo
%A Guo Qi
%A Sun Jing
%A Cui Jiangwei
%A Li Maoshun
%A Chen Rui
%A Fei Wuxiong
%A Zhao Yun
%A <br>兰博
%A 郭旗
%A 孙静
%A 崔江维
%A 李茂顺
%A 陈睿
%A 费武雄
%A 赵云
%J 半导体学报
%D 2010
%I 
%X The total-dose response and annealing effect of p-channel metal oxide semiconductor field-effect transistors (PMOSFETs) were investigated at various dose rates and biasing conditions. The results show that the shift of threshold voltage is more obvious when the dose rate is decreased. Under the various dose rates and biasing conditions, some have exhibited a time-dependent effect and others showed enhanced low-dose-rate sensitivity (ELDRS). Finally, using the subthreshold-separating method, the threshold-voltage shift is separated into shifts due to interface states and oxide-trapped charges, and the underlying mechanisms of the observed effects are discussed. It has been indicated that the ELDRS effect results from the different quantities of the interface states generated at high and low dose rates.
%K PMOSFETs
%K bias
%K ELDRS
%K TDE
%K interface states
%K oxide-trapped charge<br>PMOSFETs，偏置，ELDRS，TDE，界面态，氧化物陷阱电荷
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F0451233415A31BE3DDBB923278B9A98&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=94C357A881DFC066&sid=F30C8D2FD1A068A8&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=1