%0 Journal Article
%T Theoretical study of the SiO2/Si interface and its effect on energy band profile and MOSFET gate tunneling current<br>二氧化硅与硅界面及其对能带轮廓及MOSFET栅遂穿电流影响的理论研究
%A Zhu Huiwen
%A Liu Yongsong
%A Mao Lingfeng
%A Shen Jingqin
%A Zhu Zhiyan
%A Tang Weihua
%A <br>朱晖文
%A 刘咏松
%A 毛凌峰
%A 沈静琴
%A 朱志艳
%A 唐为华
%J 半导体学报
%D 2010
%I 
%X Two SiO2/Si interface structures, which are described by the double bonded model (DBM) and the bridge oxygen model (BOM), have been theoretically studied via first-principle calculations. First-principle simulations demonstrate that the width of the transition region for the interface structure described by DBM is larger than that for the interface structure described by BOM. Such a difference will result in a difference in the gate leakage current. Tunneling current calculation demonstrates that the SiO2/Si interface structure described by DBM leads to a larger gate leakage current. oindent
%K interface
%K MOSFETs
%K gate tunneling current oindent<br>界面
%K 金属氧化物半导体场效应晶体管
%K 栅遂穿
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=EC99E8909FE2FA17661D986162AF13F5&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=5D311CA918CA9A03&sid=CA484CA5E580A3C1&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0