%0 Journal Article
%T Effect of power variation on microstructure and surface morphology of HgCdTe films deposited by RF magnetron sputtering<br>生长功率对HgCdTe薄膜微观结构以及表面形貌影响
%A Wang Guanghu
%A Kong Jincheng
%A Li Xiongjun
%A Qiu Feng
%A Li Cong
%A Yang Lili
%A Kong Lingde
%A Ji Rongbin
%A <br>王光华
%A 孔金丞
%A 李雄军
%A 邱锋
%A 李悰
%A 杨丽丽
%A 孔令德
%A 姬荣斌
%J 半导体学报
%D 2010
%I 
%X Mercury cadmium telluride films were grown by the RF magnetron sputtering technique at different sputtering powers. In experiment, X-ray diffraction (XRD) and atomic forcemicroscopy (AFM) have been used to characterize the microstructure of HgCdTe films. The experimental results showed that when the growth power increased, the growth rate of HgCdTe films increased; when the growth power was less than 30 W, the HgCdTe film deposited by RF magnetron sputtering was amorphous; when the growth power was more than 30 W, the films exhibited polycrystalline structure. Films deposited at different growth rates were found to have characteristically different formations and surface morphologies; as observed through AFM, the surface morphology is composed of longitudinal islands forming a maze-like pattern in the high deposition rate. AFM analysis also illustrated that a significant reduction in the areal density of large islands and characteristically smoother films was achieved using a low deposition rate.
%K HgCdTe films
%K semiconductors
%K growth rate
%K microstructure
%K surface morphology<br>碲镉汞薄膜
%K 半导体
%K 生长速率
%K 微观结构
%K 表面形貌
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2CF43FCD697191A5A116EEF4CB1A0FAC&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=94C357A881DFC066&sid=F0BD85756E0B7B28&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=0