%0 Journal Article
%T The Bipolar Field-Effect Transistor:I.Electrochemical Current Theory(Two-MOS-Gates on Pure-Base)<br>双极场引晶体管:I.电化电流理论(双MOS栅纯基）
%A Chih-Tang Sah
%A Bin B Jie
%A <br>薩支唐
%A 揭斌斌
%J 半导体学报
%D 2007
%I 
%X This paper describes the bipolar field-effect transistor (BiFET) and its theory.Analytical solution is obtained from partitioning the two-dimensional transistor into two one-dimensional transistors.The analysis employs the parametric surface-electric-potential and the electrochemical (quasi-Fermi) potential-gradient driving force to compute the current. Output and transfer D.C.current and conductance versus voltage are presented over practical ranges of terminal D.C.voltages and device parameters. Electron and hole surface channel currents are present simultaneously,a new feature which could provide circuit functions in one physical transistor such as the CMOS inverter and SRAM memory.
%K bipolar field-effect transistor theory
%K MOS field-effect transistor
%K bipolar junction transistor
%K simultaneous hole and electron surface channel
%K volume<br>双极场引晶体管理论
%K MOS场引晶体管
%K 双极结型晶体管
%K 同时并存空穴电子表面沟道
%K 体积沟道
%K 表面势
%K bipolar
%K field-effect
%K transistor
%K theory
%K MOS
%K field-effect
%K transistor
%K bipolar
%K junction
%K transistor
%K simultaneous
%K hole
%K and
%K electron
%K surface
%K channel
%K volume
%K channel
%K surface
%K potential
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5646F94D35B54F6FC681692F947B3C62&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=708DD6B15D2464E8&sid=00B387A522283F93&eid=2B71A0B813002B9E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=21