%0 Journal Article
%T X-ray reflectivity and atomic force microscopy studies of MOCVD grown AlxGa1-xN/GaN superlattice structures<br>MOCVD AlxGa1-xN/GaN超晶格结构的X射线反射谱与原子力显微研究
%A Wang Yuanzhang
%A Li Jinchai
%A Li Shuping
%A Chen Hangyang
%A Liu Dayi
%A Kang Junyong
%A <br>王元樟
%A 李金钗
%A 李书平
%A 陈航洋
%A 刘达艺
%A 康俊勇
%J 半导体学报
%D 2011
%I 
%X The grazing incidence X-ray reflectivity (GIXR) technique and atomic force microscopy (AFM) were exploited to obtain an accurate evaluation of the surfaces and interfaces for metalorganic chemical vapor deposition grown AlxGa1-xN/GaN superlattice structures. The X-ray diffraction results have been combined with reflectivity data to evaluate the layer thickness and Al mole fraction in the AlGaN layer. The presence of a smooth interface is responsible for the observation of intensity oscillation in GIXR, which is well correlated to step flow observation in AFM images of the surface. The structure with a low Al mole fraction (x=0.25) and thin well width has a rather smooth surface for the Rrms of AFM data value is 0.45 nm.
%K metalorganic chemical vapor deposition
%K interfaces
%K surfaces
%K nitrides
%K superlattices
%K high resolution X-ray diffraction<br>金属有机化合物化学气相淀积
%K 界面
%K 表面‘GaN基半导体
%K 超晶格
%K 高分辨率x射线衍射
%K x射线反射谱
%K 原子力显微镜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=3DFC88ABA190FA309F70216E237F959F&yid=9377ED8094509821&vid=9971A5E270697F23&iid=E158A972A605785F&sid=8B7DB049A826198C&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0