%0 Journal Article
%T X Band MMIC Power Amplifier Based on InGaP/GaAs HBT<br>基于InGaP/GaAs HBT的X波段MMIC功率放大器研制
%A Chen Yanhu
%A Shen Huajun
%A Wang Xiantai
%A Ge Ji
%A Li Bin
%A Liu Xinyu
%A Wu Dexin
%A <br>陈延湖
%A 申华军
%A 王显泰
%A 葛荠
%A 李滨
%A 刘新宇
%A 吴德馨
%J 半导体学报
%D 2007
%I 
%X An X band InGaP/GaAs HBT single stage MMIC power amplifier is reported.The self-aligning InGaP/GaAs HBT process was used to fabricate the circuit.The PA circuit is biased at the class AB state.The small signal S parameter test shows that at 8~8.5GHz,the linear power gain is 8~9dB,VSWRin<2,and VSWRout<3.After optimizing the collector bias,the linear gain is improved to 9~10dB.Under an 8.5GHz CW signal power test with optimized loading conditions,the P1dB of the circuit is 29.4dBm,relevant power gain is 7.2dB,and relevant PAE is 42%.The Psat of the circuit is 30dBm.
%K HBT
%K MMIC
%K X band<br>HBT
%K MMIC
%K X波段
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BA5616599FB2D50B&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=94C357A881DFC066&sid=61000B595C9AE527&eid=1CBB73E9593E8833&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8