%0 Journal Article
%T Remarkable Resistance Change in Plasma Oxidized TiOx/TiNx Film for Memory Application
%A WU Liang-Cai
%A SONG Zhi-Tang
%A LIU Bo
%A RAO Feng
%A XU Cheng
%A ZHANG Ting
%A YIN Wei-Jun
%A FENG Song-Lin
%A <br>吴良才
%A 宋志棠
%A 饶峰
%A 徐成
%A 张挺
%A 殷伟君
%A 封松林
%J 中国物理快报
%D 2007
%I 
%X We report the experimental phenomenon of large resistance change in plasma oxidized TiOx/TiNx film fabricated on W bottom-electrode-contact （W-BEC） array. The W-BEC in diameter 26Ohm is fabricated by a 0.18μm CMOS technology, and the TiOx/TiNx cell array is formed by rf magnetron sputtering and reactive ion etching. In current-voltage （I- V） measurement for current-sweeping mode, large snap-back of voltage is observed, which indicates that the sample changes from high-resistance state （HRS） to low-resistance state （LRS）. In the I-V measurement for voltage-sweeping mode, large current collapse is observed, which indicates that the sample changes from LRS to HRS. The current difference between HRS and LRS is about two orders. The threshold current and voltage for the resistance change is about 5.0- 10^-5 A and 2.5 V, respectively. The pulse voltage can also change the resistance and the pulse time is as shorter as 30 ns for the resistance change. These properties of TiOx/TiNx film are comparable to that of conventional phase-change material, which makes it possible for RRAM application.
%K 84
%K 37
%K +q
%K 85
%K 50
%K -n
%K 73
%K 61
%K -r<br>电阻
%K 等离子
%K 氧化物
%K 薄膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=A6F1F92187EC7BB815D39E99C65EAF61&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=E158A972A605785F&sid=17FE7A1C78626A81&eid=9236E752FE2887AD&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0