%0 Journal Article
%T An Ultra-Low Specific On-Resistance VDMOS with a Step Oxide-Bypassed Trench Structure<br>具有超低导通电阻阶梯槽型氧化边VDMOS新结构
%A Duan Baoxing
%A Yang Yintang
%A Zhang Bo
%A Li Zhaoji
%A <br>段宝兴
%A 杨银堂
%A 张波
%A 李肇基
%J 半导体学报
%D 2008
%I 
%X A novel Step Oxide-Bypassed (SOB) trench VDMOS structure is designed based on the Oxide-Bypassed concept proposed by Liang Y C.This structure is suitable for breakdown voltage below 300V to obtain ultra-low specific on-resistance.The main feature of this structure is the various thicknesses of sidewall oxide,which modulate electric field distribution in the drift region and the charge compensation effect.As a result,the breakdown voltage is increased no less than 20% due to the more uniform electric field of the drift region,while the specific on-resistance was reduced by 40%~60% for the step oxide bypassed compared with the oxide-bypassed structure.
%K step oxide-bypassed
%K VDMOS
%K breakdown voltage
%K specific on-resistance<br>阶梯氧化边
%K VDMOS
%K 击穿电压
%K 导通电阻
%K step
%K oxide-bypassed
%K VDMOS
%K breakdown
%K voltage
%K specific
%K on-resistance
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=3620879F00BC91E033231437D897B430&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=E158A972A605785F&sid=2E4E3741E8FB64E9&eid=8243B77967FFD12E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=17