%0 Journal Article
%T A single-event-hardened phase-locked loop using the radiation-hardened-by-design technique<br>一款通过抗辐照设计加固技术实现的抗单粒子锁相环
%A Han Benguang
%A Guo Zhongjie
%A Wu Longsheng
%A Liu Youbao
%A <br>韩本光
%A 郭仲杰
%A 吴龙胜
%A 刘佑宝
%J 半导体学报
%D 2012
%I 
%X A radiation-hardened-by-design phase-locked loop (PLL) with a frequency range of 200 to 1000 MHz is proposed. By presenting a novel charge compensation circuit, composed by a lock detector circuit, two operational amplifiers, and four MOS devices, the proposed PLL significantly reduces the recovery time after the presence of a single event transient (SET). Comparing with many traditional hardened methods, most of which endeavor to enhance the immunity of the charge pump output node to an SET, the novel PLL can also decrease its susceptibility in the presence of an SET in other blocks. A novel system model is presented to describe immunity of a PLL to an SET and used to compare the sensitivity of traditional and hardened PLLs to an SET. An SET is simulated on Sentaurus TCAD simulation workbench to model the induced pulse current. Post simulation with a 130 nm CMOS process model shows that the recovery time of the proposed PLL reduces by up to 93.5% compared with the traditional one, at the same time, the charge compensation circuit adds no complexity to the systemic parameter design.
%K phase-locked-loop
%K single event effect
%K SET
%K hardened by design
%K charge compensation<br>锁相环，单粒子效应，单粒子瞬态，抗辐照设计加固，电荷补偿
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=12FAD7BF88E1F42A00A5A724AC54F69D&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=F3090AE9B60B7ED1&sid=559EE571892D8195&eid=B31275AF3241DB2D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9