%0 Journal Article
%T Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz<br>f＝210GHz的超高速InP/InGaAs单异质结晶体管
%A Cheng Wei
%A Jin Zhi
%A Liu Xinyu
%A Yu Jinyong
%A Xu Anhuai
%A Qi Ming
%A <br>程伟
%A 金智
%A 刘新宇
%A 于进勇
%A 徐安怀
%A 齐鸣
%J 半导体学报
%D 2008
%I 
%X 成功地将Polyimide钝化平坦化工艺应用于InP/InGaAs单异质结晶体管制作工艺中.在Vce=1.1V,Ic=33.5mA的偏置条件下,发射极尺寸为1.4μm×1.5μm的器件,其ft达到210GHz.这种器件非常适合高速低功耗方面的应用,例如超高速数模混合电路以及光学通信系统等.
%K InP
%K HBT
%K polyimide
%K planarization<br>InP
%K 异质结晶体管
%K 聚酰亚胺
%K 平坦化
%K InP
%K HBT
%K polyimide
%K planarization
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B0D279CC6114832E681F70568D166721&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=38B194292C032A66&sid=3081401A9FAB9CE2&eid=84A93BA251D28205&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11