%0 Journal Article
%T The Complete Semiconductor Transistor and Its Incomplete Forms
%A Jie Binbin
%A Sah Chih-Tang
%A <br>揭斌斌
%A 薩支唐
%J 半导体学报
%D 2009
%I 
%X This paper describes the definition of the complete transistor.For semiconductor devices,the complete transistor is always bipolar,namely,its electrical characteristics contain both electron and hole currents controlled by their spatial charge distributions.Partially complete or incomplete transistors,via coined names or/and designed physical geometries,included the 1949 Shockley p/n junction transistor(later called Bipolar Junction Transistor,BJT),the 1952 Shockley unipolar 'field-effect' transistor(FET,la...
%K bipolar field-effect transistor
%K bipolar junction transistor
%K complete transistor
%K incomplete transistors
%K electromechanical transistors
%K biochemical transistors<br>bipolar
%K field-effect
%K transistor
%K bipolar
%K junction
%K transistor
%K complete
%K transistor
%K incomplete
%K transistors
%K electromechanical
%K transistors
%K biochemical
%K transistors
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A01B99C4F6C5322545D81AA0D9DEBA6E&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=B31275AF3241DB2D&sid=92CB2BEBE90B5E3E&eid=F3090AE9B60B7ED1&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=15