%0 Journal Article
%T Charge Storage Characteristics of Nonvolatile Floating-Gate Memory Based on Gradual Ge1-xSix/Si Heteronanocrystals<br>基于锗硅异质纳米晶的非易失浮栅存储器的存储特性
%A Chen Yubin
%A Zuo Zheng
%A Shi Yi
%A Pu Lin
%A Zheng Youdou
%A <br>闾锦
%A 陈裕斌
%A 左正
%A 施毅
%A 濮林
%A 郑有炓
%J 半导体学报
%D 2008
%I 
%X Gradual Ge1-xSix/Si hetero-nanocrystals on ultrathin SiO2 layers were fabricated by combining self-assembled growth and the selective chemical etching method.Charge storage characteristics of nonvolatile floating-gate memory based on gradual Ge1-xSix/Si hetero-nanocrystals have been fabricated and investigated through capacitance-voltage(C-V)and capacitance-time(C-t)measurements.The findings indicate that holes reach a longer retention time in gradual Ge1-xSix/Si hetero-nanocrystals,which can be attributed ...
%K hetero-nanocrystals
%K nonvolatile floating-gate memory
%K capacitance-voltage measurement
%K self-assembled growth
%K selective chemical etching<br>异质纳米晶
%K 非易失浮栅存储器
%K 电容
%K 电压特性
%K 自组织生长
%K 选择化学刻蚀
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FF54A2C4CB2CC769CA62EFBF3185CDF4&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=E158A972A605785F&sid=BDEE8BA20F4733DB&eid=1F7317C17A9AF4FA&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=18