%0 Journal Article
%T Characteristics of High In-Content InGaN Alloys Grown by MOCVD
%A ZHU Xue-Liang
%A GUO Li-Wei
%A YU Nai-Sen
%A PENG Ming-Zeng
%A YAN Jian-Feng
%A GE Bing-Hui
%A JIA Hai-Qiang
%A CHEN Hong
%A ZHOU Jun-Ming
%A <br>朱学亮
%A 郭丽伟
%A 于乃森
%A 彭铭曾
%A 颜建锋
%A 葛炳辉
%A 贾海强
%A 陈弘
%A 周均铭
%J 中国物理快报
%D 2006
%I 
%X InN and In0.46Ga0.54N films are grown on sapphire with a GaN buffer by metalorganic chemical vapour deposition (MOCVD). Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveal that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 475 cm2V-1s-1 and that of In0.46Ga0.54 is 163 cm2V-1s-1;. Room-temperature photoluminescence measurement of the InN film shows a peak at 0.72 eV, confirming that a high quality InN film is fabricated for applications to full spectrum solar cells.
%K 81
%K 15
%K Gh
%K 61
%K 10
%K Nz
%K 68
%K 37
%K Ps<br>InN膜
%K In0.46
%K Ca0.54N膜
%K MOCVD法
%K 晶体生长
%K 铟含量
%K 太阳电池
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=9A93D2930BB8370630D362D6A2E348E9&yid=37904DC365DD7266&vid=EA389574707BDED3&iid=59906B3B2830C2C5&sid=071C888203E532B6&eid=D57EF70979A40648&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=21