%0 Journal Article %T Characteristics of High In-Content InGaN Alloys Grown by MOCVD %A ZHU Xue-Liang %A GUO Li-Wei %A YU Nai-Sen %A PENG Ming-Zeng %A YAN Jian-Feng %A GE Bing-Hui %A JIA Hai-Qiang %A CHEN Hong %A ZHOU Jun-Ming %A
朱学亮 %A 郭丽伟 %A 于乃森 %A 彭铭曾 %A 颜建锋 %A 葛炳辉 %A 贾海强 %A 陈弘 %A 周均铭 %J 中国物理快报 %D 2006 %I %X InN and In0.46Ga0.54N films are grown on sapphire with a GaN buffer by metalorganic chemical vapour deposition (MOCVD). Both high resolution x-ray diffraction and high resolution transmission electron microscopy results reveal that these films have a hexagonal structure of single crystal. The thin InN film has a high mobility of 475 cm2V-1s-1 and that of In0.46Ga0.54 is 163 cm2V-1s-1;. Room-temperature photoluminescence measurement of the InN film shows a peak at 0.72 eV, confirming that a high quality InN film is fabricated for applications to full spectrum solar cells. %K 81 %K 15 %K Gh %K 61 %K 10 %K Nz %K 68 %K 37 %K Ps
InN膜 %K In0.46 %K Ca0.54N膜 %K MOCVD法 %K 晶体生长 %K 铟含量 %K 太阳电池 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=9A93D2930BB8370630D362D6A2E348E9&yid=37904DC365DD7266&vid=EA389574707BDED3&iid=59906B3B2830C2C5&sid=071C888203E532B6&eid=D57EF70979A40648&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=21