%0 Journal Article
%T Increasing substrate resistance to improve the turn-on uniformity of a high-voltage multi-finger GG-nLDMOS<br>增加衬底电阻提高高压多指GG-nLDMOS器件的均匀导通性
%A He Chuan
%A Jiang Lingli
%A Fan Hang
%A Zhang Bo
%A <br>He Chuan
%A Jiang Lingli
%A Fan Hang
%A Zhang Bo
%J 半导体学报
%D 2013
%I 
%X 非均匀导通现象限制了多指条高压器件的ESD（静电放电）鲁棒性。本文对栅接地的n型LDMOS（GG-nLDMOS）器件在ESD应力下的导通特性进行了描述并分析了导致多指条GG-nLDMOS器件非均匀导通的原因。本文通过提出一种增加衬底电阻的器件优化结构来提高高压多指GG-nLDMOS器件的均匀导通性，并在0.35μm 40V BCD 工艺下得到成功验证。传输线脉冲(TLP)测试结果表明增加衬底电阻可以有效提高40V多指条GG-nLDMOS器件的均匀导通性并提高其ESD鲁棒性。
%K ESD
%K multi-finger
%K GGLDMOS
%K turn-on uniformity<br>ESD
%K 多指条
%K GGLDMOS
%K 均匀导通
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4D6BB6A422263A4596361007A9451952&yid=FF7AA908D58E97FA&vid=339D79302DF62549&iid=CA4FD0336C81A37A&sid=E4824350A916D9C0&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8