%0 Journal Article
%T A Monolithic InGaP/GaAs HBT Power Amplifier Design with Improved Gain Flatness<br>改善增益平坦度的新型InGaP/GaAs HBT功率放大器单片设计
%A Zhu Min
%A Yin Junjian
%A Zhang Haiying
%A <br>朱旻
%A 尹军舰
%A 张海英
%J 半导体学报
%D 2008
%I 
%X A monolithic power amplifier designed for 3GHz communication applications with improved gain flatness is studied based on InGaP/GaAs hetero-junction bipolar transistor technology in a commercial foundry.To improve gain flatness in a simple way,no external component was used in the real circuit except the decoupled bypass capacitors and RF choke.The measured linear gain is 23dB with gain flatness of ±0.25dB,satisfying the design goal and matching well with simulation results.This 2-stage power amplifier can deliver 31dBm linear output power and 44% power-added efficiency in the 400MHz bandwidth.The successful design with improved gain flatness is the result of superior distortion compensation and a coil model used as the RF choke.
%K MMIC
%K HBT
%K power amplifier
%K MMTC
%K HBT<br>功率放大器
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D934FA4E8FF860D5A278DF423C5239FF&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=5D311CA918CA9A03&sid=9BBC04B2CAF22446&eid=BEBB33B35AAF4DFE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9