%0 Journal Article
%T Carbon-Induced Deep Traps Responsible for Current Collapse in AlGaN/GaN HEMTs<br>碳致深能级引起的AlGaN/GaN HEMT电流崩塌现象
%A Pang Lei
%A Li Chengzhan
%A Wang Dongdong
%A Huang Jun
%A Zeng Xuan
%A Liu Xinyu
%A Liu Jian
%A Zheng Yingkui
%A He Zhijing
%A <br>庞磊
%A 李诚瞻
%A 王冬冬
%A 黄俊
%A 曾轩
%A 刘新宇
%A 刘键
%A 郑英奎
%A 和致经
%J 半导体学报
%D 2008
%I 
%X Although outstanding microwave power performance of AlGaN/GaN HEMTs has been reported,drain current collapse is still a problem.In this paper,an experiment was carried out to demonstrate one factor causing the collapse.Two AlGaN/GaN samples were annealed under N2-atmosphere with and without carbon incorporation,and the XPS measurement technique was used to determine that the concentration of carbon impurity in the latter sample was far higher than in the former.From the comparison of two Id-Vds characterist...
%K AlGaN/GaN HEMT
%K current collapse
%K carbon impurity
%K deep trap<br>AlGaN/GaN
%K HEMT
%K 电流崩塌
%K 碳杂质
%K 深能级
%K AlGaN/GaN
%K HEMT
%K current
%K collapse
%K carbon
%K impurity
%K deep
%K trap
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8EF68AF21232B53A56BFF17E2D53EA21&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=B31275AF3241DB2D&sid=63025EFC6CC49145&eid=81A5772701933E75&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=16