%0 Journal Article
%T A Novel Structure with Multiple Equipotential Rings for Shielding the Influence of a High Voltage Interconnection<br>具有多等位环的高压屏蔽新结构MER-LDMOS耐压分析
%A Chen Wanjun
%A Zhang Bo
%A Li Zhaoji
%A <br>陈万军
%A 张波
%A 李肇基
%J 半导体学报
%D 2006
%I 
%X A novel structure with multiple equipotential rings(MER-LDMOS) for shielding the influence of a high voltage interconnection(HVI) is proposed,and its shielding model is explained and proved with 2D device simulation.The influences of various factors on the breakdown voltage of MER-LDMOS are discussed in detail,including the p-top dose,the length of equipotential ring,the distance between the equipotential rings,and the thickness of the SiO_2.A significant increase in the breakdown voltage is realized using the MER-LDMOS structure,and its breakdown voltage increases by more than 100% compared with that of conventional LDMOS.Furthermore,the proposed structure has the advantages of simple fabrication,large process tolerance,and small leakage current.It is a new method for shielding the influence a high voltage interconnection in a high voltage integrated circuit.
%K high voltage interconnection
%K equipotential rings
%K breakdown voltage
%K LDMOS<br>高压互连线
%K 等位环
%K 击穿电压
%K LDMOS
%K 屏蔽机理
%K 结构
%K 耐压
%K 分析
%K Interconnection
%K High
%K Voltage
%K Influence
%K Rings
%K Multiple
%K 方案
%K 问题
%K 中高压
%K 高压集成电路
%K 泄漏电流
%K 容差
%K 工艺
%K 能力
%K LDMOS
%K 结果
%K 影响
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E2C8D368EA22B410&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=DF92D298D3FF1E6E&sid=098F5970044D8583&eid=0B2455B0C3E7C267&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=14