%0 Journal Article
%T Design of basic digital circuit blocks based on an OFET device charge model<br>基于有机场效应管的电荷模型的基础数字电路设计
%A Shen Shu
%A <br>沈澍
%J 半导体学报
%D 2013
%I 
%X An OFET charge model, as well as its parameter extraction method are presented. The fitting results are also discussed and different OFET model characters are compared. Some basic OFET based digital circuit blocks, including the inverter, NAND, and ring oscillator are also developed, which would be considered to be helpful to the design of relevant applications.
%K OFET
%K SPICE
%K ADS
%K inverter
%K NAND
%K ring oscillator<br>有机场效应管，SPICE
%K ADS
%K 反相器，与非门，环形振荡器
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8056E996EE6628B31C8F42C5807C5B04&yid=FF7AA908D58E97FA&vid=339D79302DF62549&iid=94C357A881DFC066&sid=952E9163BA877656&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=15