%0 Journal Article
%T Effects of the Anodic Alumina Substrate Fabrication Process on a Ta-N Thin Film Integrated Resistor<br>铝阳极氧化基板制备过程对埋置型Ta-N薄膜电阻的影响
%A Zhu Dapeng
%A Luo Le
%A <br>朱大鹏
%A 罗乐
%J 半导体学报
%D 2008
%I 
%X A Ta-N thin film resistor was integrated in anodic alumina MCM-D substrate using RF reactive sputtering.The effects of the aluminum anodization process on the microstructure of the Ta-N resistor were studied.The results show that the oxide bulges composed of Ta2O5 and Ta-O-N were formed at the surface of Ta-N film due to the effect of the upper layer of porous anodic alumina.The oxide bulge thickness was related to the anodiztion voltage.The resistivity and TCR of the remaining Ta-N resistor remained unchanged.The resistor was more stable because of the protection of the oxide bulges.
%K anodization
%K Ta-N thin film resistor
%K electrical property
%K microstructure<br>阳极氧化
%K Ta-N薄膜电阻
%K 电学性能
%K 显微结构
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A23340D7F1E30F7D2A1AD51A2BB83BA3&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=E158A972A605785F&sid=786A9BAE5CF9B9EE&eid=EEAFC972BAD75B1F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=15