%0 Journal Article
%T Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch<br>半绝缘GaAs光电导开关的光控预击穿特性
%A Ma Xiangrong
%A Shi Wei
%A Ji Weili
%A Xue Hong
%A <br>马湘蓉
%A 施卫
%A 纪卫莉
%A 薛红
%J 半导体学报
%D 2011
%I 
%X A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch.
%K light controlled prebreakdown
%K photo activated charge domain
%K self-maintained discharge
%K exciton effect<br>半绝缘砷化镓
%K 光电导开关
%K 光控制
%K 激光脉冲触发
%K 脉冲能量
%K 激子效应
%K 载流子浓度
%K PCSS
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C6D3D1CB1D1B4FDFA061E59F04512C30&yid=9377ED8094509821&vid=9971A5E270697F23&iid=59906B3B2830C2C5&sid=96A6D7C3E2F5FB3A&eid=B31275AF3241DB2D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=26