%0 Journal Article
%T A New CMOS Image Sensor with a High Fill Factor and the Dynamic Digital Double Sampling Technique
%A Liu Yu
%A Wang Guoyu
%A <br>Liu Yu
%A Wang Guoyu
%J 半导体学报
%D 2006
%I 
%X 介绍了基于0.35μm工艺设计的单片CMOS图像传感器芯片.该芯片采用有源像素结构,像素单元填充因数可达到43%,高于通常APS结构像素单元30%的指标.此外还设计了一种数字动态双采样技术,相对于传统的双采样技术(固定模式噪声约为0.5%),数字动态双采样技术具有更简洁的电路结构和更好抑制FPN噪声的效果.传感器芯片通过MPW计划采用Chartered 0.35μm数模混合工艺实现.实验结果表明芯片工作良好,图像固定模式噪声约为0.17%.
%K active pixel
%K CMOS image sensor
%K fill factor
%K dynamic digital double sampling
%K fixed pattern noise<br>有源像素
%K CMOS图像传感器
%K 填充因数
%K 动态数字双采样
%K 固定模式噪声
%K active
%K pixel
%K CMOS
%K image
%K sensor
%K fill
%K factor
%K dynamic
%K digital
%K double
%K sampling
%K fixed
%K pattern
%K noise
%K 填充因数
%K 动态数字
%K 采样技术
%K CMOS
%K 图像传感器
%K Sampling
%K Technique
%K Double
%K Digital
%K Dynamic
%K Fill
%K Factor
%K High
%K experimental
%K results
%K show
%K mixed
%K signal
%K process
%K simpler
%K circuit
%K better
%K suppression
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=76B7CE2B559D5CD3&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=0B39A22176CE99FB&sid=C2F76551C0111538&eid=E3094127AA4ABC1A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8