%0 Journal Article
%T Development and Characteristic Analysis of MOS AlGaN/GaN HEMTs<br>MOS AlGaN/GaN HEMT研制与特性分析
%A Wang Chong
%A Yue Yuanzheng
%A Ma Xiaohu
%A Hao Yue
%A Feng Qian
%A Zhang Jincheng
%A <br>王冲
%A 岳远征
%A 马晓华
%A 郝跃
%A 冯倩
%A 张进城
%J 半导体学报
%D 2008
%I 
%X 研制出在蓝宅石衬底上制作的MOS AIGaN/GaN HEMT.器件栅长1um,源漏间距4um,采用电子束蒸发4nm的Si02做栅介质.在4V栅压下器件饱和电流达到718mA/mm,最大跨导为172mS/mm,ft和fmax分别为8.1和15.3GHz.MOS HEMT栅反向泄漏电流与未做介质层的肖特基栅相比,在反偏10V时由2.1×10-8mA/mm减小到8.3×10-9mA/mm,栅漏电流减小2个数量级.MOS AIGaN/GaN HEMT采用薄的栅介质层,在保证减小栅泄漏电流的同时未引起器件跨导明显下降.
%K AIGaN/GaN<br>高电子迁移率晶体管
%K 介质栅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=7800A6F91A14189DB9ED0B0AFA13ECF0&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=5D311CA918CA9A03&sid=CDD86F65AA3A5D34&eid=0E6C9B38667ABC5C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8