%0 Journal Article
%T Accurate and fast table look-up models for leakage current analysis in 65 nm CMOS technology<br>应用于65nm CMOS技术节点漏电流分析的精确快速的查表模型
%A Xue Jiying
%A Li Tao
%A Yu Zhiping
%A <br>薛冀颖
%A 李涛
%A 余志平
%J 半导体学报
%D 2009
%I 
%X Novel physical models for leakage current analysis in 65 nm technology are proposed. Taking into consideration the process variations and emerging effects in nano-scaled technology, the presented models are capable of accurately estimating the subthreshold leakage current and junction tunneling leakage current in 65??nm technology. Based on the physical models, new table look-up models are developed and first applied to leakage current analysis in pursuit of higher simulation speed. Simulation results show that the novel physical models are in excellent agreement with the data measured from the foundry in the 65??nm process, and the proposed table look-up models can provide great computational efficiency by using suitable interpolation techniques. Compared with the traditional physical-based models, the table look-up models can achieve 2.5X speedup on average on a variety of industry circuits.
%K leakage current
%K 65?nm technology
%K table look-up model
%K interpolation<br>漏电流
%K 65nm
%K 技术节点
%K 查表模型
%K 插值
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FE245F749642366DB291A21346B5340E&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=0B39A22176CE99FB&sid=31373067B4B8BD49&eid=B31275AF3241DB2D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0