%0 Journal Article
%T Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs<br>应用于3.3kV IGBT的线性渐变掺杂结终端扩展的设计与优化
%A Jiang Huaping
%A Chen Wanjun
%A Liu Chuang
%A Rao Zugang
%A Dong Bin
%A Zhang Bo
%A <br>蒋华平
%A 陈万军
%A 刘闯
%A 饶祖刚
%A 董彬
%A 张波
%J 半导体学报
%D 2011
%I 
%X A linearly graded-doping junction termination extension (LG-JTE) for 3.3-kV-class insulated gate bipolar transistors (IGBTs) was proposed and experimentally investigated. Unlike conventional multi-implantation utilizing more than one photolithography step, a single mask with injection window widths varied linearly away from the main junction to the edge was implemented in this proposed structure. Based on the simulation results, IGBTs with LG-JTE structures were successfully fabricated on the domestic process platform. The fabricated devices exhibited a 3.7 kV forward-blocking voltage, which is close to the theoretical value of an ideal parallel plane case. This is the first success in fabrication 3.3 kV-class IGBT in a domestic application.
%K high voltage IGBT
%K junction termination extension
%K IGBT<br>IGBT
%K 线性变化
%K 交界处
%K 兴奋剂
%K 绝缘栅双极晶体管
%K 优化
%K 设计
%K 渐变掺杂
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C6D3D1CB1D1B4FDF3ABA9AA4690B801F&yid=9377ED8094509821&vid=9971A5E270697F23&iid=59906B3B2830C2C5&sid=0710AF5CE49A447C&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9