%0 Journal Article
%T An InGaP/GaAs HBT MIC Power Amplifier with Power Combining at the X-Band<br>InGaP/GaAs HBT X波段混合集成功率合成放大器的研制
%A Chen Yanhu
%A Shen Huajun
%A Wang Xiantai
%A Chen Gaopeng
%A Liu Xinyu
%A Yuan Dongfeng
%A Wang Zuqiang
%A <br>陈延湖
%A 申华军
%A 王显泰
%A 陈高鹏
%A 刘新宇
%A 袁东风
%A 王祖强
%J 半导体学报
%D 2008
%I 
%X A MIC power amplifier with power combining based on InGaP/GaAs HBT is developed and measured for the application of the latest high power amplifier stage of the X-band.A novel InGaP/GaAs HBT power transistor with an on-chip RC stabilization network is used as the power combing cell to improve the stability of the circuit.A compact microstripe line parallel matching network is used to divide and combine the power.By biasing the amplifier at class AB:Vcc=7V,Ic=2 30mA,a maximum CW stabile output power of 28.9d...
%K InGaP/GaAs HBT
%K power combining
%K MIC
%K power amplifiers<br>InGaP/GaAs
%K HBT
%K 功率合成
%K 混合集成电路
%K 功率放大器
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BB63C38500118D7D52D7818427926739&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=708DD6B15D2464E8&sid=E76352A43E934A0F&eid=38BD0FBE576A75DD&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=4