%0 Journal Article
%T Effect of n Doped Layers in an Amorphous Silicon Top Solar Cell on the Performance of "Micromorph" Tandem Solar Cells<br>非晶硅顶电池中的n型掺杂层对非晶硅/微晶硅叠层太阳电池性能的影响
%A Han Xiaoyan
%A Li Guijun
%A Hou Guofu
%A Zhang Xiaodan
%A Zhang Dekun
%A Chen Xinliang
%A Wei Changchun
%A Sun Jian
%A Xue Junming
%A Zhang Jianjun
%A Zhao Ying
%A Geng Xinhua
%A <br>韩晓艳
%A 李贵君
%A 侯国付
%A 张晓丹
%A 张德坤
%A 陈新亮
%A 魏长春
%A 孙健
%A 薛俊明
%A 张建军
%A 赵颖
%A 耿新华
%J 半导体学报
%D 2008
%I 
%X Pin/pin "micromorph" tandem solar cells were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD).Tunnel recombination junctions of the "micromorph" tandem solar cells consisting of two microcrystalline-doped layers with a defect rich interface were developed.While the solar cells performed reasonably well under AM 1.5 lights,we found through spectral response measurements that the first deposited cell of the tandem structures was leaking under low light conditions.The insertion of a thin protection layer of n-type amorphous silicon is presented in this paper.The results shown that the introduced n-type amorphous silicon could improve the leakage phenomenon.The leakage phenomenon disappeared when the thickness of the n-type amorphous silicon was 6nm,leading to an increase in open-circuit voltage.The open-circuit voltage increased from 1.27 to 1.33V and FF increased from 60% to 63%.
%K very high frequency plasma enhanced chemical vapor deposition
%K "micromorph"
%K tandem solar cell
%K n/p tunnel recombination junction<br>超高频等离子增强化学气相沉积技术
%K 非晶硅/微晶硅叠层电池
%K n/p隧穿结
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1A6B0B1645D00D9D36EEDE22C91BF736&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=5D311CA918CA9A03&sid=C28CDC724DDFD536&eid=044F0D973C30117E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=5