%0 Journal Article
%T Design and optimization of a monolithic GaInP/GaInAs tandem solar cell<br>GaInP/GaInAs 叠层太阳电池的结构设计及优化
%A Zhang Han
%A Chen Nuofu
%A Wang Yu
%A Yin Zhigang
%A Zhang Xingwang
%A Shi Huiwei
%A Wang Yanshuo
%A Huang Tianmao
%A <br>张汉
%A 陈诺夫
%A 汪宇
%A 尹志岗
%A 张兴旺
%A 施辉伟
%A 王彦硕
%A 黄添懋
%J 半导体学报
%D 2010
%I 
%X We have theoretically calculated the photovoltaic conversion efficiency of a monolithic dual-junction GaInP/GaInAs device, which can be experimentally fabricated on a binary GaAs substrate. By optimizing the bandgap combination of the considered structure, an improvement of conversion efficiency has been observed in comparison to the conventional GaInP2/GaAs system. For the suggested bandgap combination 1.83 eV/1.335 eV, our calculation indicates that the attainable efficiency can be enhanced up to 40.45% (300 suns, AM1.5d) for the optimal structure parameter (1550 nm GaInP top and 5500 nm GaInAs bottom), showing promising application prospects due to its acceptable lattice-mismatch (0.43%) to the GaAs substrate. oindent
%K 三五族半导体，光伏，叠层太阳电池，理论效率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=27B7A673391AD2725E8DC090B974E788&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=5D311CA918CA9A03&sid=6857C17099DC1C4F&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0