%0 Journal Article
%T RTD''''s Relaxation Oscillation Characteristics with Applied Pressure<br>RTD在压力下的弛豫振荡特性
%A Tong Zhaomin
%A Xue Chenyang
%A Zhang Binzhen
%A Liu Jun
%A Qiao Hui
%A <br>仝召民
%A 薛晨阳
%A 张斌珍
%A 刘俊
%A 乔慧
%J 半导体学报
%D 2008
%I 
%X The relaxation oscillation characteristics of a resonant tunneling diode (RTD) with applied pressure are reported.The oscillation circuit is simulated and designed by Pspice 8.0,and the measured oscillation frequency is up to 200kHz.Using molecular beam epitaxy (MBE),AlAs/InxGa1-xAs/GaAs double barrier resonant tunneling structures (DBRTS) are grown on (100) semi-insulated (SI) GaAs substrate,and the RTD is processed by Au/Ge/Ni/Au metallization and an air-bridge structure.Because of the piezoresistive effect of RTD,with Raman spectrum to measure the applied pressure,the relaxation oscillation characteristics have been studied,which show that the relaxation oscillation frequency has approximately a -17.9kHz/MPa change.
%K resonant tunneling diode
%K relaxation oscillation
%K Raman spectrum
%K piezoresistive effect<br>共振隧穿二极管
%K 弛豫振荡
%K 喇曼光谱仪
%K 压阻效应
%K resonant
%K tunneling
%K diode
%K relaxation
%K oscillation
%K Raman
%K spectrum
%K piezoresistive
%K effect
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=EE9DEA24009F82E05019D76D9359DAFD&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=CA4FD0336C81A37A&sid=7C3A4C1EE6A45749&eid=1AE5323881A5ECDC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9