%0 Journal Article
%T Bipolar Theory of MOS Field-Effect Transistors and Experiments<br>MOS 场引晶体管双极理论和实验
%A Chih-Tang Sah
%A Bin B Jie
%A <br>薩支唐
%A 揭斌斌
%J 半导体学报
%D 2007
%I 
%X The bipolar theory of field-effect transistor is introduced to replace the 55-year-old classic unipolar theory invented by Shockley in 1952 in order to account for the characteristics observed in recent double-gate nanometer silicon MOS field-effect transistors.Two electron and two hole surface channels are simultaneously present in all channel current ranges.Output and transfer characteristics are computed over practical base and gate oxide thicknesses.The bipolar theory corroborates well with experimental data reported recently for FinFETs with metal/silicon and p/n junction source/drain contacts.Single-device realization of CMOS inverter and SRAM memory circuit functions are recognized.
%K unipolar FET theory
%K bipolar FET theory
%K simultaneous hole and electron surface channels
%K volume channel
%K double-gate
%K pure-base<br>单场引FET理论
%K 双场引FET理论
%K MOSFET
%K 同时存在空穴电子表面沟道和体积沟道
%K 双栅
%K 纯基FET理论
%K unipolar
%K FET
%K theory
%K bipolar
%K FET
%K theory
%K simultaneous
%K hole
%K and
%K electron
%K surface
%K channels
%K volume
%K channel
%K double-gate
%K pure-base
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5646F94D35B54F6FAE1E55EBECE5740E&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=F3090AE9B60B7ED1&sid=B67AA60AE93E3CE8&eid=BD9BFF5428C0CED6&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14