%0 Journal Article
%T An improved analytical model for the electric field distribution in an RF-LDMOST structure<br>一种针对RF-LDMOST结构改进的解析模型
%A Jiang Yibo
%A Wang Shuai
%A Li Ke
%A Chen Lei
%A Du Huan
%A <br>姜一波
%A 王帅
%A 李科
%A 陈蕾
%A 杜寰
%J 半导体学报
%D 2010
%I 
%X This paper presents an improved analytical model for an RF-LDMOST structure based on the 2D Poisson equation. The derived model indicates the influence of high doped shallow drift and low doping concentration p epitaxial layer on the electric field distribution. In particular, the importance of the thickness of the p epitaxial layer for electric field distributions in RF-LDMOST are shown through MATLAB analytical results based on the model. Then ISE TCAD simulations and experiments are processed and their results are in agreement with the analytical model. This model contributes to the comprehension and optimization design of RF-LDMOST.
%K RF-LDMOST
%K analytical model
%K thickness of p epitaxial layer<br>射频LDMOS
%K 解析模型
%K p外延层厚度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2557545A9BB65B72159918B0413CE5F7&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=59906B3B2830C2C5&sid=924CE9B2DDBE1A1C&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0