%0 Journal Article
%T Analysis of an InP/InGaAs/InP DHBT with Composite Doping Collector<br>带有复合掺杂层集电区的InP/InGaAs/InP DHBT直流特性分析
%A Sun Hao
%A Qi Ming
%A Xu Anhuai
%A Ai Likun
%A Su Shubing
%A Liu Xinyu
%A Liu Xunchun
%A Qian He
%A <br>孙浩
%A 齐鸣
%A 徐安怀
%A 艾立鹍
%A 苏树兵
%A 刘新宇
%A 刘训春
%A 钱鹤
%J 半导体学报
%D 2006
%I 
%X A novel InP/InGaAs/InP double heterojunction bipolar transistor (DHBT) structure is designed,in which a thin heavily doped n+-InP layer between the base and the collector is used to eliminate the energy spike at the B-C junction and overcome the electron blocking effect.The dependence of the effective barrier spike at the B-C junction and the I-V characteristics of the DHBT on the thickness and doping density of the n+-InP composite collector are analyzed theoretically.The results show that the device performance is optimal when the doping density is 3E19cm-3 and the thickness is 3nm for the n+-InP composite collector.The InP/InGaAs/InP DHBTs with composite doping collector are grown by gas source molecular beam epitaxy (GSMBE).The DC characteristics of the devices demonstrate that the InP/InGaAs/InP DHBT designed here effectively eliminates the energy spike at the B-C junction and improves the device performance.
%K InP/InGaAs
%K heterojunction bipolar transistor
%K composite collector
%K doping
%K barrier spike<br>InP/InGaAs
%K 异质结双极晶体管
%K 复合集电区
%K 掺杂
%K 势垒尖峰
%K 复合掺杂
%K 集电区
%K InGaAs
%K DHBT
%K 特性分析
%K Analysis
%K Collector
%K Doping
%K 输出特性
%K 改善
%K 材料结构
%K 器件特性
%K 结构材料
%K 生长
%K GSMBE
%K 气态源分子束外延
%K 结果
%K 影响
%K 有效势垒高度
%K 厚度
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=27121B57F87FFF07&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=5D311CA918CA9A03&sid=0407E07CB2FA770D&eid=F91C9B147A9ECBD0&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=8