%0 Journal Article %T A novel low ripple charge pump with a 2X/1.5X booster for PCM
用于相变存储器的超低输出纹波2X/1.5X电荷泵 %A Fu Cong %A Song Zhitang %A Chen Houpeng %A Cai Daolin %A Wang Qian %A Hong Xiao %A Ding Sheng %A Li Xi %A
富聪 %A 宋志棠 %A 陈后鹏 %A 蔡道林 %A 王倩 %A 宏潇 %A 丁晟 %A 李喜 %J 半导体学报 %D 2012 %I %X A low ripple switched capacitor charge pump applicable to phase change memory (PCM) is presented. For high power efficiency, the selected charge pump topology can automatically change the power conversion ratio between 2X/1.5X modes with the input voltage. For a low output ripple, a novel operation mode is used. Compared with the conventional switched capacitor charge pump, the flying capacitor of the proposed charge pump is charged to Vo-Vin during the charge phase (Vo is the prospective output voltage). In the discharge phase, the flying capacitor is placed in series with the Vin to transfer energy to the output, so the output voltage is regulated at Vo. A simulation was implemented for a DC input range of 1.6-2.1 V in on SMIC standard 40 nm CMOS process, the result shows that the new operation mode could regulate the output of about 2.5 V with a load condition from 0 to 10 mA, and the ripple voltage is lower than 4 mV. The maximum power efficiency reaches 91%. %K charge pump %K DC to DC converter %K PCM drivers %K low ripple %K power efficiency
电荷泵 %K PCM %K 低纹波 %K 助推器 %K 开关电容 %K 功率效率 %K 输出纹波 %K CMOS工艺 %U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=86F358091BA7D2A95A3BA5DD43591D0D&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=9CF7A0430CBB2DFD&sid=586F249612E49646&eid=B31275AF3241DB2D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9