%0 Journal Article
%T Development and characteristics analysis of recessed-gate MOS HEMT<br>槽栅MOSHEMT研制与特性分析
%A Wang Chong
%A Ma Xiaohu
%A Feng Qian
%A Hao Yue
%A Zhang Jincheng
%A Mao Wei
%A <br>王冲
%A 马晓华
%A 冯倩
%A 郝跃
%A 张进城
%A 毛维
%J 半导体学报
%D 2009
%I 
%X 研制出蓝宝石衬底的槽栅AlGaN/GaN MOS HEMT。器件栅长1um，源漏间距4um,在4V栅压下器件饱和电流达到684mA/mm，最大跨导219 mS/mm，ft和fmax分别为9.2GHz和14.1GHz。相比未刻槽的MOS HEMT，最大跨导提高24.3%，相比金半接触的常规结构HEMT，肖特基泄漏电流减小2个数量极
%K high electron mobility transistors
%K AlGaN/GaN
%K recessed-gate
%K dielectric gate<br>高电子迁移率晶体管
%K AlGaN/GaN
%K 槽栅
%K 介质栅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=36E04E685D4969BDFB87BCE061271F19&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=94C357A881DFC066&sid=0DD78FDC5CD0920F&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10