%0 Journal Article
%T A 20-GHz ultra-high-speed InP DHBT comparator<br>基于InP-DHBT的20 GHz的超高速比较器
%A Huang Zhenxing
%A Zhou Lei
%A Su Yongbo
%A Jin Zhi
%A <br>黄振兴
%A 周磊
%A 苏永波
%A 金智
%J 半导体学报
%D 2012
%I 
%X An ultra-high-speed, master-slave voltage comparator circuit is designed and fabricated in InP/GaInAs double heterojunction bipolar transistors (DHBTs) technology with current gain cutoff frequency fT of 170 GHz. The complete chip die, including bondpads, is 0.75?1.04 mm2. It consumes 440 mW from a single -4V power supply, excluding clock part. 77 DHBTs have been used in the monolithic comparator. A full Nyquist test has been performed up to 20GHz, with the input sensitivity varying from 6 mV at 10 GHz to 16 mV at 20 GHz. To our knowledge, this is the first InP based integrated circuit including more than 70 DHBTs, and it achieves the highest sampling rate on the mainland of China.
%K InP
%K comparator
%K HBT
%K emitter coupled logic
%K latched comparator
%K sensitivity<br>DHBT
%K InP基
%K 超高速
%K 双异质结双极晶体管
%K 电压比较电路
%K GHz
%K 截止频率
%K 电流增益
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6054DFDC987AA8B2669D646EE82AAF51&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=DF92D298D3FF1E6E&sid=219555D85CF08354&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11