%0 Journal Article
%T Intrinsic stability of an HBT based on a small signal equivalent circuit model<br>基于小信号等效电路模型的HBT本征稳定性研究
%A Chen Yanhu
%A Shen Huajun
%A Liu Xinyu
%A Li Huijun
%A Xu Hui
%A Li Ling
%A <br>陈延湖
%A 申华军
%A 刘新宇
%A 李惠军
%A 徐辉
%A 李玲
%J 半导体学报
%D 2010
%I 
%X Intrinsic stability of the heterojunction bipolar transistor (HBT) was analyzed and discussed based on a small signal equivalent circuit model. The stability factor of the HBT device was derived based on a compact T-type small signal equivalent circuit model of the HBT. The effect of the mainly small signal model parameters of the HBT on the stability of the HBT was thoroughly examined. The discipline of parameter optimum to improve the intrinsic stability of the HBT was achieved. The theoretic analysis results of the stability were also used to explain the experimental results of the stability of the HBT and they were verified by the experimental results.
%K HBT
%K intrinsic stability
%K stability factor
%K small signal equivalent circuit model<br>异质结双极晶体管
%K 本征稳定性
%K 稳定性因子
%K 小信号等效电路模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E59906C8EF63345D771392BE35C6378D&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=59906B3B2830C2C5&sid=315511820AE60E2D&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0