%0 Journal Article
%T Study on Si-SiGe Three-Dimensional CMOS Integrated Circuits<br>Si-SiGe材料三维CMOS集成电路技术研究
%A Hu Huiyong
%A Zhang Heming
%A Jia Xinzhang
%A Dai Xianying
%A Xuan Rongxi
%A <br>胡辉勇
%A 张鹤鸣
%A 贾新章
%A 戴显英
%A 宣荣喜
%J 半导体学报
%D 2007
%I 
%X Based on the physical characteristics of SiGe material,a new three-dimensional (3D) CMOS IC structure is proposed,in which the first device layer is made of Si material for nMOS devices and the second device layer is made of SixGe1-x material for pMOS.The intrinsic performance of ICs with the new structure is then limited by Si nMOS.The electrical characteristics of a Si-SiGe 3D CMOS device and inverter are all simulated and analyzed by MEDICI.The simulation results indicate that the Si-SiGe 3D CMOS ICs are faster than the Si-Si 3D CMOS ICs.The delay time of the 3D Si-SiGe CMOS inverter is 2~3ps,which is shorter than that of the 3D Si-Si CMOS inverter.
%K Si-SiGe
%K three-dimensional
%K CMOS
%K integrated circuits<br>Si-SiGe
%K 三维
%K CMOS
%K 集成电路
%K Si-SiGe
%K three-dimensional
%K CMOS
%K integrated
%K circuits
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FC40E188FD1789FB&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=94C357A881DFC066&sid=8243B77967FFD12E&eid=AF14A8B15FB15A64&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9