%0 Journal Article
%T Trench gate IGBT structure with floating P region<br>具有P型浮空区的槽栅IGBT结构
%A Qian Mengliang
%A Li Zehong
%A Zhang Bo
%A Li Zhaoji
%A <br>钱梦亮
%A 李泽宏
%A 张波
%A 李肇基
%J 半导体学报
%D 2010
%I 
%X A new trench gate IGBT structure with a floating P region is proposed, which introduces a floating P region into the trench accumulation layer controlled IGBT (TAC-IGBT). The new structure maintains a low on-state voltage drop and large forward biased safe operating area (FBSOA) of the TAC-IGBT structure while reduces the leakage current and improves the breakdown voltage. In addition, it enlarges the short circuit safe operating area (SCSOA) of the TAC-IGBT, and is simple in fabrication and design. Simulation results indicate that, for IGBT structures with a breakdown voltage of 1200 V, the leakage current of the new trench gate IGBT structure is one order of magnitude lower than the TAC-IGBT structure and the breakdown voltage is 150 V higher than the TAC-IGBT.
%K TAC-IGBT
%K CT-IGBT
%K accumulation channel
%K floating P region
%K SCSOA<br>TAC-IGBT，常规槽栅IGBT，积累沟道，P浮空区，短路安全工作区
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2296E50E6138E6AA3CD539D4080E50A8&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=0B39A22176CE99FB&sid=3C73E27DA7223187&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0