%0 Journal Article
%T Bound Polaron in Wurtzite Nitrides Semiconductor and Pressure Effect<br>纤锌矿氮化物半导体束缚极化子及压力效应
%A Xue Yaguang
%A Yan Zuwei
%A Huangfu Yanfang
%A <br>薛亚光
%A 闫祖威
%A 皇甫艳芳
%J 半导体学报
%D 2008
%I 
%X A variational approach is used to study the polaron effect from both the abnormal optical LO-like and TO-like phonons on the binding energies of impurity states in wurtzite nitrides semiconductor crystals by considering the uniaxial anisotropy.Taking the variations of electronic effective mass,material dielectric constants and crystal lattice vibrational frequencies with hydrostatic pressure into account,the pressure effect on the binding energy of bound polaron is discussed.The numerical results show that the polaron effect obviously decreases the binding energy,and the contributions from impurity-LO-like phonon interaction to the polaron effect are dominant.It is also found that pressure enhances the binding energy and its anisotropy.
%K binding energy
%K polaron
%K nitrides semiconductors<br>结合能
%K 极化子
%K 氮化物半导体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=90F4A8EE86A3361C17DC5E8E14A0B647&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=5D311CA918CA9A03&sid=CC00A075BF965716&eid=B08191F41006DCF9&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=16