%0 Journal Article
%T A process/temperature variation tolerant RSSI<br>Process/Temperature Variation Tolerant RSSI
%A Lei Qianqian
%A Lin Min
%A Shi Yin
%A <br>雷倩倩
%A 林敏
%A 石寅
%J 半导体学报
%D 2012
%I 
%X A low power process/temperature variation tolerant CMOS received signal strength indicator (RSSI) and limiter amplifier are designed using SMIC 0.13μm CMOS technology. The limiter uses six-stage amplifier architecture for minimum power consideration. The RSSI has a dynamic range more than 60dB, and the RSSI linearity error is within ±0.5dB for an input power from -65dBm to -8dBm. The RSSI output voltage is from 0.15V to 1V and the slope of the curve is 14.17mV/dB. Furthermore, with the compensation circuit, the proposed RSSI shows good temperature-independent and good robustness against process variation characteristics. The RSSI with integrated AGC loop draws 1.5mA (I and Q paths) from a 1.2V single supply.
%K limiter
%K RSSI
%K AGC
%K temperature compensation<br>limiter
%K RSSI
%K AGC
%K temperature
%K compensation
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=3A1389981F84318304B6257BE8FE0C8B&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=59906B3B2830C2C5&sid=B45EC20082AE1236&eid=B31275AF3241DB2D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8