%0 Journal Article
%T A neutron radiation-hardened superluminescent diode<br>抗中子辐射加固超辐射发光二极管的研究
%A Jiao Jian
%A Tan Manqing
%A Zhao Miao
%A Chang Jinlong
%A <br>焦健
%A 谭满清
%A 赵妙
%A 常金龙
%J 半导体学报
%D 2012
%I 
%X We present a novel superluminescent diode (SLD) with high optical performances for hardened neutron irradiation. The degradation of the light output from the SLDs is caused by a reduction of the minority carrier lifetime resulting from displacement damage after high-energy neutron irradiation. The SLDs with a higher pre-irradiation light output will be less sensitive to radiation. We have selected an InGaAsP/InP multi-quantum well (MQW) as the active region structure for its performance, its high optical gain and minute active region. Graded-index separate-confinement-heterostructure (GRIN-SCH) has been applied for the waveguide structure. A specific absorbing region and anti-reflective coatings have been designed and optimized. Moreover, the radiation test results indicate that the SLD with an InGaAsP/InP MQW structure has better neutron hardening ability than the SLD with DH structures after a 6 × 1013-1 × 1014 n/cm2 1 MeV neutron irradiation.
%K superluminescent diode
%K neutron irradiation
%K InGaAsP/InP multi-quantum well<br>超辐射发光二极管
%K 硬化能力
%K 中子辐射
%K InGaAsP
%K 多量子阱结构
%K 少数载流子寿命
%K 光学性能
%K 中子辐照
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=86F358091BA7D2A97B331E2A25480D3C&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=9CF7A0430CBB2DFD&sid=4CF6A1CF0481DB1A&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12