%0 Journal Article
%T Strain Distribution and Piezoelectric Effect in GaN/AlN Quantum Dots<br>GaN/AlN量子点结构中的应变分布和压电效应
%A Liang Shuang
%A Lu Yanwu
%A <br>梁双
%A 吕燕伍
%J 半导体学报
%D 2007
%I 
%X An effective method is introduced to investigate the strained fields and piezoelectric effect in GaN/AlN quantum dots (QDs) with hexagonal truncated pyramid shape.The strain distribution and charge density were calculated using the finite element method (FEM).It is shown that spontaneous and piezoelectric polarization resulted in the separation of electrons and holes,bringing about a strong built-in electric field in the QD structures.The strain field and piezoelectric potential influence the distribution of charges.The electrons are localized near the top of the QDs,and the holes are localized in the wetting layer just below the pyramid.Furthermore,the piezoelectric potential in the QDs affects the electron levels and band edge shape.
%K GaN/AlN quantum dot
%K strain
%K spontaneous polarization
%K piezoelectric polarization<br>GaN/AlN量子点结构
%K 应变
%K 自发极化
%K 压电极化
%K 量子点结构
%K 应变分布
%K 压电效应
%K Piezoelectric
%K Effect
%K Distribution
%K Strain
%K 影响
%K 能级分布
%K 形状
%K 带边
%K 存在
%K 极化电场
%K 空穴聚集
%K 电子
%K 变化
%K 电荷分布
%K 结果
%K 极化电荷密度
%K 自发极化
%K 研究
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=EC14DE1FD2F861C5622970256CB9C00A&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=CA4FD0336C81A37A&sid=ECE8E54D6034F642&eid=D997634CFE9B6321&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12