%0 Journal Article
%T Study of Electron Mobility in 4H-SiC Buried-Channel MOSFETs
%A Gao Jinxi
%A Zhang Yimen
%A Zhang Yuming
%A <br>Gao Jinxi
%A Zhang Yimen
%A Zhang Yuming
%J 半导体学报
%D 2006
%I 
%X The effects of several factors on mobility in 4H-SiC buried-channel (BC) MOSFETs are studied.A simple model that gives a quantitative analysis of series resistance effects on the effective mobility and field-effect mobility is proposed.A series resistance not only decreases field-effect mobility but also reduces the gate voltage corresponding to the peak field-effect mobility.The dependence of the peak field-effect mobility on series resistance follows a simple quadratic polynomial.The effects of uniform and exponential interface state distributions in the forbidden band on field-effect mobility are analyzed with an analytical model.The effects of non-uniform interface states can be ignored at lower gate voltages but become more obvious as the gate bias increases.
%K 4H-SiC
%K buried-channel
%K MOSFET
%K mobility
%K series resistance
%K interface states<br>4H-SiC
%K 隐埋沟道
%K MOSFET
%K 迁移率
%K 串联电阻
%K 界面态
%K 4H-SiC
%K buried-channel
%K MOSFET
%K mobility
%K series
%K resistance
%K interface
%K states
%K 隐埋沟道
%K MOSFETs
%K 迁移率
%K 研究
%K Mobility
%K Electron
%K interface
%K states
%K lower
%K bias
%K exponential
%K distributions
%K band
%K analytical
%K model
%K dependence
%K quadratic
%K polynomial
%K decreases
%K gate
%K voltage
%K peak
%K simple
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=38B4F687A0E1693C&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=0B39A22176CE99FB&sid=E2B9962CCD971A0D&eid=F50A8B5513721E1C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11