%0 Journal Article
%T A Solar-Blind AlGaN-Based p-i-n Back-Illuminated Photodetector with a High Temperature AlN Template Layer<br>高温AlN为模板的AlGaN基p-i-n背照式日光盲探测器
%A Zou Zey
%A Yang Mohu
%A Liu Ting
%A Zhao Wenbo
%A Zhao Hong
%A Luo Muchang
%A Wang Zhen
%A <br>邹泽亚
%A 杨谟华
%A 刘挺
%A 赵文伯
%A 赵红
%A 罗木昌
%A 王振
%J 半导体学报
%D 2008
%I 
%X The growth,fabrication,and characterization of a solar-blind AlGaN-based p-i-n back-illuminated photodetector with a high temperature AlN template are reported for the first time. The photodetector was fabricated from multilayer Alx Ga1-xN films grown by MOCVD on double-polished c-plane (0001) sapphire substrates. Crack free,high Al content (0.7) AlGaN multilayer structure,designed for the solar-blind p-i-n back-illuminated photodetector,was grown on a high temperature AlN template without a nuclear layer. The high quality of the epitaxial layers is demonstrated by in-situ optical reflectance monitoring curve, triple-axis X-ray diffraction, and atomic-force microscope. At a 1.8V bias, the processed p-i-n photodetector exhibits a solar-blind photoresponse with a maximum responsivity of 0. 0864A/W at 270nm. The photodetector exhibits a forward turn-on voltage at around 3.5V and a reverse breakdown voltage above 20V,and the leakage current is below 20pA for 2V reverse bias.
%K solar-blind
%K high temperature AlN template
%K back-illuminated photodetector
%K p-i-n<br>日光盲
%K 高温AlN模板
%K 背照式探测器
%K p-i-n
%K solar-blind
%K high
%K temperature
%K AlN
%K template
%K back-illuminated
%K photodetector
%K p-i-n
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5C589DDA6D039D756366F742CCA41889&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=CA4FD0336C81A37A&sid=A04140E723CB732E&eid=EA389574707BDED3&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11