%0 Journal Article
%T Particular electrical quality of a-plane GaN films grown on r-plane sapphire by metal-organic chemical vapor deposition<br>用MOCVD在r面蓝宝石衬底上生长的a面GaN的独特电学性质研究
%A Xu Shengrui
%A Zhou Xiaowei
%A Hao Yue
%A Mao Wei
%A Zhang Jincheng
%A Zhang Zhongfen
%A Bai Lin
%A Zhang Jinfeng
%A Li Zhiming
%A <br>许晟瑞
%A 周小伟
%A 郝跃
%A 毛维
%A 张进城
%A 张忠芬
%A 白琳
%A 张金凤
%A 李志明
%J 半导体学报
%D 2009
%I 
%X Nonpolar (1120) a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane (1102) sapphire substrate. The structural and electrical properties of the a-plane GaN films are investigated by high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and van der Pauw Hall measurement. It is found that the Hall voltage shows more anisotropy than that of the c-plane samples; furthermore, the mobility changes with the degree of the van der Pauw square diagonal to the c direction, which shows significant electrical anisotropy. Further research indicates that electron mobility is strongly influenced by edge dislocations.
%K GaN
%K anisotropic
%K HRXRD
%K nonpolar<br>氮化镓
%K 各向异性
%K 高分辨X射线衍射
%K 非极性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=81A3E412E974CB7061B9E9918F84DD08&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=708DD6B15D2464E8&sid=9898A2A0D8F18E6A&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0