%0 Journal Article
%T Effect of an Asymmetric Doping Channel on Partially Depleted SOI MOSFETs<br>部分耗尽SOI MOSFETs中沟道的非对称掺杂效应
%A Tang Junxiong
%A Tang Minghu
%A Yang Feng
%A Zhang Junjie
%A Zhou Yichun
%A Zheng Xuejun
%A <br>唐俊雄
%A 唐明华
%A 杨锋
%A 张俊杰
%A 周益春
%A 郑学军
%J 半导体学报
%D 2008
%I 
%X Asymmetric doping channel (AC) partially depleted (PD) silicon-on-insulator (SOI) devices are simulated using two-dimensional simulation software.The electrical characteristics such as the output characteristics and the breakdown voltage are studied in detail.Through simulations,it is found that the AC PD SOI device can suppress the floating effects and improve the breakdown characteristics over conventional partially depleted silicon-on-insulator devices.Also compared to the reported AC FD SOI device,the performance variation with device parameters is more predictable and operable in industrial applications.The AC FD SOI device has thinner silicon film,which causes parasitical effects such as coupling effects between the front gate and the back gate and hot electron degradation effects.
%K AC PD SOI MOSFETs
%K output characteristics
%K breakdown voltage<br>AC部分耗尽SOI
%K MOSFETs
%K 输出特性
%K 击穿电压
%K AC
%K PD
%K SOI
%K MOSFETs
%K output
%K characteristics
%K breakdown
%K voltage
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=79D0B696B617C771A6A1D69ACFF057A0&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=B31275AF3241DB2D&sid=A50445FB05D4B1A0&eid=CD794621A184DC14&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11