%0 Journal Article
%T Output Characteristics of n-Buried-pSOI Sandwiched RF Power LDMOS<br>具有n埋层pSOI三明治结构的射频功率LDMOS的输出特性
%A Li Zehong
%A Wu Lijuan
%A Zhang Bo
%A Li Zhaoji
%A <br>李泽宏
%A 吴丽娟
%A 张波
%A 李肇基
%J 半导体学报
%D 2008
%I 
%X A novel n-buried-pSOI sandwiched structure for an RF power LDMOS is proposed.The output characteristics of the RF power LDMOS are greatly affected by the drain-substrate parasitic capacitance.The output characteristics become better as the drain-substrate parasitic capacitance decreases.Results show that the drain-substrate capacitance of the n-buried-pSOI sandwiched LDMOS is 46.6% less than that of the normal LDMOS,and 11.5% less than that of the n-buried-pSOI LDMOS,respectively.At 1dB compression point,its output power is 188% higher than that of the normal LDMOS,and 10.6% higher than that of the n-buried-pSOI LDMOS,respectively. The power-added efficiency of the proposed structure is 38.3%.The breakdown voltage of the proposed structure is 11% more than that of the normal LDMOS.
%K n-buried-pSOI
%K sandwiched
%K parasitic capacitance
%K output characteristics
%K RF power LDMOS<br>n埋层pSOI
%K 三明治
%K 寄生电容
%K 输出特性
%K 射频功率LDMOS
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=28984D797101FC4F1DC816B13FEACD85&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=708DD6B15D2464E8&sid=8BA849EBE34B1882&eid=0457E3D977B9FECD&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13