%0 Journal Article
%T An Extrinsic fmax> 100 GHz InAlN/GaN HEMT with AlGaN Back Barrier<br>fmax大于100GHz的AlGaN背势垒结构InAlN-GaN HEMT研究
%A liu bo
%A <br>刘波
%J 半导体学报
%D 2013
%I 
%X We report the DC and RF performance of InAlN/GaN high-electron mobility transistors with AlGaN back barrier grown on SiC substrates. These presented results confirm the high performance that is reachable by InAlN-based technology. The InAlN/GaN HEMT sample showed a high 2DEG mobility of 1550 cm2/(V·s) at a 2DEG density of 1.7×1013 cm-2. DC and RF measurements were performed on the unpassivated device with 0.2 μm "T" gate. The maximum drain current density at VGS=2 V is close to 1.05 A/mm in a reproducible way. The reduction in gate leakage current helps to increase the frequency performance of AlGaN back barrier devices. The power gain cut-off frequency of a transistor with an AlGaN back barrier is 105 GHz, which is much higher than that of the device without an AlGaN back barrier at the same gate length. These results indicate InAlN/GaN HEMT is a promising candidate for millimeter-wave application.
%K AlGaN back barrier
%K InAlN
%K high-electron-mobility transistors
%K power gain cutoff frequency<br>AlGaN背势垒
%K InAlN
%K 高电子迁移率晶体管
%K 最高振荡频率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=DFEDDF274BE1BF803A6317A058D821D6&yid=FF7AA908D58E97FA&vid=339D79302DF62549&iid=E158A972A605785F&sid=111261BB4169B13A&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13